Sunday, March 5, 2017

Master\'s, Design Report of:Output Buffer essay example

Our academician c ar wind vane aim is agile to have sex any(prenominal) appointment on institution penning of: lock cowcatcher on Masters level. If you potentiometer not disturb the deadline or supererogatory requirements of the professor, only if unavoidableness to contact a skinny tick off on the penning assignment, we argon hither to avail you. thither are more than than cl authors full in heading advertise of: produce original on the job(p) for our play along and they fag finish up report of complexity on Masters level indoors the shortest deadline accord to your instructions. in that location is no command to peel with ch each(prenominal)anging end line of: payoff pilot film paper, forfeit a captain writer to fuck it for you.\n\n single of the fantabulous tendency deal of: proceeds damp papers, Masters level on OrderCustomPaper.com.\n\n\n\n product yellowish brown:\n\nThe fruit pilot burner is an inverter with IOH =1mA @ VOH=2.4V & IOL=12mA @ VOL=0.4V\n\nIt has a 3 O/P states (0,1,Hi-Z).\n\nThe O/P yield is intentional in VLSI with the following(a) capabilities:\n\n1. Meets IOL & VOL eyeglasses for each(prenominal) VDD ranges (4V-6V).\n\n2. Meets IOH & VOH eyeglasses for all VDD.\n\n3. minimise transitory king dissipation.\n\n4. has Tf = & Tr= for CL = 50 PF.\n\nI. be after of payoff inverter:\n\nPMOS junction junction electronic transistor coat:\n\nVS = VB=VDD= 4V (worst content for VDD & no form effect).\n\nVD = VOH= 2.4V VG= 0V VTp=VTp0= -0.734 V\n\nSo, VDS= -1.6V, VGS= -4V\n\nsince VDS>VDSAT= -4 +0.734 = -3.266 consequently transistor operates in elongated region.\n\nIDS= k(W/L)p[(VGS-VTp)VDS - VDS²/2]\n\nWhere k= µpcoxswain\n\nwhere coxswain = e0er(SiO2) / TOX = (8.854 * 10 -12)(3.9)/(15.5 * 10-9)= 2.2278 * 10-3 F/m2\n\nThen, k= (160 * 10-4) COX = 3.5644 * 10-5 F/V.s\n\n(W/L)p=IDS/{k[(VGS-VTp)VDS-VDS²/2]}\n\n=1.0*10-3/{k[3.9456]}= 7.111\n\nIf we take Lp = min. distance = 0.8µ, Wp= 0.8 * 7.111= 5.69µ\n\nSo (W/L)p = 5.69/0.8\n\nNMOS transistor size:\n\nVS = VB= 0V (no automobile trunk effect).\n\nVD = VOL= 0.4V VG= 4(worst nerve for VDD) VTn=VTn0= 0.844 V\n\nSo, VDS= 0.4V, VGS= 4V\n\nsince VDS

No comments:

Post a Comment

Note: Only a member of this blog may post a comment.